2.45 GHz Class E Power Amplifier for a Transmitter Combining LINC and EER
DOI:
https://doi.org/10.14311/1137Keywords:
Class E, power amplifier, CLIERAbstract
A 10 W class-E RF power amplifier (PA) is designed and fabricated using a Cree GaN HEMT. The proposed PA uses an innovative input circuit to optimize band with. At 2.45 GHz the PA achieves a PAE of 60 % at an outputpower of 40 dBm. The resulting amplifier is simulated and constructed using a transmissionline topology. Two of these amplifiers are fabricated on a single board for outphasing application. Their suitability for outphasing application and supply modulation is investigated.Downloads
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