Differences Between Doped and Undoped Zirconium Alloy Oxide Layers

Authors

  • H. Frank

DOI:

https://doi.org/10.14311/1161

Keywords:

Zirconium alloy oxide layers, doped and undoped samples, I-V characteristics, temperature dependence of transport parameters

Abstract

2 eV and the temperature dependence of resistivity, electron mobility and carrier concentration, and also the behavior of injection and extraction currents, were found to be equal inside the error limits, thus proving the doping to be ineffective. Zirconium oxide fits into the group of oxide semiconductors, being an n-type reduction semiconductor, conduction depending on stoichiometric deviation, i.e. missing oxygen.

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Author Biography

  • H. Frank

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Published

2010-01-02

Issue

Vol. 50 No. 2 (2010)

Section

Articles

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How to Cite

Frank, H. (2010). Differences Between Doped and Undoped Zirconium Alloy Oxide Layers. Acta Polytechnica, 50(2). https://doi.org/10.14311/1161