Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser
DOI:
https://doi.org/10.14311/38Abstract
An optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si) films from amorphous layers applicable in the solar cell production is analyzed in the paper. In the computational simulations, the influence of basic characteristic parameters of the experimental procedure on the mechanisms of pc-Si lateral growth is studied. Among these parameters, the energy density of the applied laser and the thickness of the amorphous silicon (a-Si) layer are identified as the most significant. As an optimum solution, the mechanism of pc-Si growth consisting in repeated melting of a part of already crystallized pc-Si layer by the scanning laser is proposed.Downloads
Published
Issue
Section
License
Copyright (c) 2015 Acta Polytechnica
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
1. Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
2. Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
3. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
4. ddd
