Recrystallization of InSb Surfaces Induced by Pulsed Lasers

Abstract

Pulsed laser processing of InSb wafers for the application in designing high speed infrared detectors is studied both theoretically and experimentally. The recrystallization of InSb surfaces resulting in restoration of the implanted region to a single crystal state is presented as a reasonable alternative to the conventional thermal heating. In the theoretical part, thermal equilibrium and nonequilibrium models of melting, recrystallization and evaporation are formulated to describe transport phenomena in the material induced by laser irradiation. In the experimental part, InSb samples irradiated by the ruby (694 nm, 80ns FWHM), and ArF (193 nm, 10 ns FWHM) lasers are studied using time resolved reflectivity, Auger electron spectroscopy and low energy electron diffraction methods to analyze surface modifications. A comparison of the experimental data with the numerical predictions shows that while for the ruby laser a reasonable agreement in surface melt duration is achieved, the results for the ArF laser differ quite a lot. As a main reason for these differences, the amorphization of the surface is identified.